CSD16411Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

+16V, -12V

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Vgs(th) (Max) @ Id :

2.3V @ 250μA

Fall Time (Typ) :

3.1 ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Element Configuration :

Single

REACH SVHC :

No SVHC

Mount :

Surface Mount

Radiation Hardening :

No

Series :

NexFET™

Number of Pins :

8

Rise Time :

7.8ns

Gate Charge (Qg) (Max) @ Vgs :

3.8nC @ 4.5V

Thickness :

1mm

Width :

3.3mm

Turn-Off Delay Time :

6 ns

Rds On (Max) @ Id, Vgs :

10m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Base Part Number :

CSD16411

Turn On Delay Time :

5.3 ns

Factory Lead Time :

6 Weeks

Length :

3.3mm

Continuous Drain Current (ID) :

56A

Additional Feature :

AVALANCHE RATED

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Drain to Source Breakdown Voltage :

25V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

16V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Pin Count :

8

Operating Mode :

ENHANCEMENT MODE

Feedback Cap-Max (Crss) :

43 pF

ECCN Code :

EAR99

Package / Case :

8-PowerVDFN

Nominal Vgs :

2 V

Power Dissipation :

2.7W

Dual Supply Voltage :

25V

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 12.5V

Current - Continuous Drain (Id) @ 25°C :

14A Ta 56A Tc

Power Dissipation-Max :

2.7W Ta

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Lead Free :

Contains Lead

Threshold Voltage :

2V

JESD-609 Code :

e3