CSD16408Q5
- Mfr.Part #
- CSD16408Q5
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 22A/113A 8VSON
- Stock
- 3,012
- In Stock :
- 3,012
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 5
- Pin Count :
- 8
- Drain to Source Voltage (Vdss) :
- 25V
- Turn On Delay Time :
- 11.3 ns
- Base Part Number :
- CSD16408
- Lead Free :
- Contains Lead
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 22A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 12.5V
- Power Dissipation :
- 3.1W
- Vgs (Max) :
- +16V, -12V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Thickness :
- 1mm
- Rise Time :
- 25ns
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time :
- 6 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 11 ns
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 25A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.9nC @ 4.5V
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 113A Tc
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 16V
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 10.8 ns
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 113A
- Contact Plating :
- Tin
- DS Breakdown Voltage-Min :
- 25V
- Radiation Hardening :
- No
- Series :
- NexFET™
- Width :
- 6mm
- Height :
- 1.05mm
- Power Dissipation-Max :
- 3.1W Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Additional Feature :
- AVALANCHE RATED
- Terminal Position :
- Dual
- Package / Case :
- 8-PowerTDFN
- Transistor Element Material :
- SILICON
- Length :
- 5mm
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Datasheets
- CSD16408Q5

N-Channel Tape & Reel (TR) 4.5m Ω @ 25A, 10V +16V, -12V 1300pF @ 12.5V 8.9nC @ 4.5V 25V 8-PowerTDFN
CSD16408Q5 Overview
The maximum input capacitance of this device is 1300pF @ 12.5V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 113A.As shown in the table below, the drain current of this device is 22A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 11 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 25V.The drain-to-source voltage (Vdss) of this transistor needs to be at 25V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
CSD16408Q5 Features
a continuous drain current (ID) of 113A
the turn-off delay time is 11 ns
a 25V drain to source voltage (Vdss)
CSD16408Q5 Applications
There are a lot of Texas Instruments
CSD16408Q5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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