CSD16407Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Terminal Form :

NO LEAD

Power Dissipation :

3.1W

DS Breakdown Voltage-Min :

25V

Vgs (Max) :

+16V, -12V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Fall Time (Typ) :

9 ns

Gate to Source Voltage (Vgs) :

16V

Pin Count :

8

Power Dissipation-Max :

3.1W Ta

Thickness :

1mm

Mounting Type :

Surface Mount

Turn-Off Delay Time :

16 ns

Number of Pins :

8

Height :

1.05mm

Turn On Delay Time :

11.9 ns

Package / Case :

8-PowerTDFN

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

200A

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Number of Terminations :

5

Nominal Vgs :

1.6 V

Continuous Drain Current (ID) :

100A

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

25V

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 12.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0033Ohm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Base Part Number :

CSD16407

Terminal Position :

Dual

Width :

6mm

Lifecycle Status :

NRND (Last Updated: 4 weeks ago)

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Operating Mode :

ENHANCEMENT MODE

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

REACH SVHC :

No SVHC

Rise Time :

18.4ns

Series :

NexFET™

Element Configuration :

Single