CSD16406Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.7W

Mounting Type :

Surface Mount

Dual Supply Voltage :

25V

Drain to Source Breakdown Voltage :

25V

Length :

3.3mm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Turn On Delay Time :

7.3 ns

Turn-Off Delay Time :

8.5 ns

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Series :

NexFET™

Gate to Source Voltage (Vgs) :

16V

Vgs (Max) :

+16V, -12V

Width :

3.3mm

FET Type :

N-Channel

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Threshold Voltage :

1.7V

Power Dissipation-Max :

2.7W Ta

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

19A Ta 60A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 12.5V

Number of Pins :

8

Number of Elements :

1

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0074Ohm

Pin Count :

8

Element Configuration :

Single

Rise Time :

12.9ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

8-PowerTDFN

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.7 V

Thickness :

1mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Radiation Hardening :

No

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

60A

Rds On (Max) @ Id, Vgs :

5.3m Ω @ 20A, 10V

Lead Free :

Contains Lead

Pbfree Code :

yes

Number of Terminations :

5

Base Part Number :

CSD16406

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED

Terminal Position :

Dual

Fall Time (Typ) :

4.8 ns