CSD16404Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Threshold Voltage :

1.8V

Number of Pins :

8

Drain-source On Resistance-Max :

0.0072Ohm

Turn-Off Delay Time :

8.4 ns

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Base Part Number :

CSD16404

Length :

4.9mm

Dual Supply Voltage :

25V

Continuous Drain Current (ID) :

81A

Rise Time :

13.4ns

Contact Plating :

Tin

Termination :

SMD/SMT

Width :

6mm

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Nominal Vgs :

1.8 V

Pin Count :

8

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

5.1m Ω @ 20A, 10V

Lead Free :

Contains Lead

Gate to Source Voltage (Vgs) :

16V

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

+16V, -12V

Package / Case :

8-PowerTDFN

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

21A Ta 81A Tc

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Element Configuration :

Single

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation :

3W

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Turn On Delay Time :

7.8 ns

Fall Time (Typ) :

4.6 ns

Thickness :

1mm

Number of Terminations :

5

Transistor Application :

SWITCHING

Series :

NexFET™

Radiation Hardening :

No

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1220pF @ 12.5V