CSD16403Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

+16V, -12V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Number of Terminations :

5

Height :

1.1mm

Dual Supply Voltage :

25V

Drain to Source Breakdown Voltage :

25V

Nominal Vgs :

1.6 V

Series :

NexFET™

Element Configuration :

Single

Power Dissipation :

3.1W

Drain-source On Resistance-Max :

0.0037Ohm

Thickness :

1mm

Termination :

SMD/SMT

Fall Time (Typ) :

9.2 ns

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 20A, 10V

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Base Part Number :

CSD16403

Threshold Voltage :

1.6V

Current - Continuous Drain (Id) @ 25°C :

28A Ta 100A Tc

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Rise Time :

18.3ns

Number of Pins :

8

Mount :

Surface Mount

Power Dissipation-Max :

3.1W Ta

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

Lead Free :

Contains Lead

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

100A

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

224 mJ

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-PowerTDFN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2660pF @ 12.5V

Gate to Source Voltage (Vgs) :

16V

Length :

4.9mm

JESD-609 Code :

e3

Turn-Off Delay Time :

15.2 ns

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Width :

6mm

Pbfree Code :

yes

Turn On Delay Time :

11.8 ns