CSD16401Q5T
- Mfr.Part #
- CSD16401Q5T
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 100A 8VSON
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Feedback Cap-Max (Crss) :
- 230 pF
- Thickness :
- 1mm
- Drain to Source Voltage (Vdss) :
- 25V
- Base Part Number :
- CSD16401
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 12.5V
- Package / Case :
- 8-PowerTDFN
- Power Dissipation-Max :
- 3.1W Ta
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Terminal Finish :
- Matte Tin (Sn)
- DS Breakdown Voltage-Min :
- 25V
- Factory Lead Time :
- 6 Weeks
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 40A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Width :
- 6mm
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Terminal Form :
- NO LEAD
- Series :
- NexFET™
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Height :
- 1.05mm
- Drain-source On Resistance-Max :
- 0.0023Ohm
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 5mm
- Number of Pins :
- 8
- Pulsed Drain Current-Max (IDM) :
- 240A
- Vgs (Max) :
- +16V, -12V
- Datasheets
- CSD16401Q5T

N-Channel Tape & Reel (TR) 1.6m Ω @ 40A, 10V +16V, -12V 4100pF @ 12.5V 29nC @ 4.5V 25V 8-PowerTDFN
CSD16401Q5T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4100pF @ 12.5V.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
CSD16401Q5T Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)
CSD16401Q5T Applications
There are a lot of Texas Instruments
CSD16401Q5T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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