CSD16401Q5T

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Mfr.Part #
CSD16401Q5T
Manufacturer
Texas Instruments
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 100A 8VSON
Stock
57
In Stock :
57

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Manufacturer :
Texas Instruments
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Height :
1.05mm
Transistor Application :
SWITCHING
FET Type :
N-Channel
Pbfree Code :
yes
Power Dissipation-Max :
3.1W Ta
Feedback Cap-Max (Crss) :
230 pF
Number of Pins :
8
Rds On (Max) @ Id, Vgs :
1.6m Ω @ 40A, 10V
RoHS Status :
ROHS3 Compliant
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 4.5V
Drain to Source Voltage (Vdss) :
25V
Avalanche Energy Rating (Eas) :
500 mJ
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Transistor Element Material :
SILICON
Element Configuration :
Single
Terminal Position :
Dual
Pulsed Drain Current-Max (IDM) :
240A
Operating Temperature :
-55°C~150°C TJ
Current - Continuous Drain (Id) @ 25°C :
100A Ta
DS Breakdown Voltage-Min :
25V
JESD-609 Code :
e3
Additional Feature :
AVALANCHE RATED
Number of Terminations :
5
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
Vgs (Max) :
+16V, -12V
Factory Lead Time :
6 Weeks
Package / Case :
8-PowerTDFN
Drain-source On Resistance-Max :
0.0023Ohm
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
1.9V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 12.5V
Terminal Form :
NO LEAD
Thickness :
1mm
Width :
6mm
Mounting Type :
Surface Mount
Length :
5mm
Lead Free :
Contains Lead
Base Part Number :
CSD16401
Case Connection :
DRAIN
Terminal Finish :
Matte Tin (Sn)
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Series :
NexFET™
Datasheets
CSD16401Q5T
Introducing Transistors - FETs, MOSFETs - Single Texas Instruments CSD16401Q5T from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Base Part Number:CSD16401, CSD16401Q5T pinout, CSD16401Q5T datasheet PDF, CSD16401Q5T amp .Beyond Transistors - FETs, MOSFETs - Single Texas Instruments CSD16401Q5T ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments CSD16401Q5T


N-Channel Tape & Reel (TR) 1.6m Ω @ 40A, 10V +16V, -12V 4100pF @ 12.5V 29nC @ 4.5V 25V 8-PowerTDFN

CSD16401Q5T Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4100pF @ 12.5V.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

CSD16401Q5T Features


the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)


CSD16401Q5T Applications


There are a lot of Texas Instruments
CSD16401Q5T applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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