CSD16401Q5T
- Mfr.Part #
- CSD16401Q5T
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 100A 8VSON
- Stock
- 57
- In Stock :
- 57
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Height :
- 1.05mm
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 3.1W Ta
- Feedback Cap-Max (Crss) :
- 230 pF
- Number of Pins :
- 8
- Rds On (Max) @ Id, Vgs :
- 1.6m Ω @ 40A, 10V
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 4.5V
- Drain to Source Voltage (Vdss) :
- 25V
- Avalanche Energy Rating (Eas) :
- 500 mJ
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Pulsed Drain Current-Max (IDM) :
- 240A
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 100A Ta
- DS Breakdown Voltage-Min :
- 25V
- JESD-609 Code :
- e3
- Additional Feature :
- AVALANCHE RATED
- Number of Terminations :
- 5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Vgs (Max) :
- +16V, -12V
- Factory Lead Time :
- 6 Weeks
- Package / Case :
- 8-PowerTDFN
- Drain-source On Resistance-Max :
- 0.0023Ohm
- Reach Compliance Code :
- not_compliant
- Vgs(th) (Max) @ Id :
- 1.9V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4100pF @ 12.5V
- Terminal Form :
- NO LEAD
- Thickness :
- 1mm
- Width :
- 6mm
- Mounting Type :
- Surface Mount
- Length :
- 5mm
- Lead Free :
- Contains Lead
- Base Part Number :
- CSD16401
- Case Connection :
- DRAIN
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- NexFET™
- Datasheets
- CSD16401Q5T

N-Channel Tape & Reel (TR) 1.6m Ω @ 40A, 10V +16V, -12V 4100pF @ 12.5V 29nC @ 4.5V 25V 8-PowerTDFN
CSD16401Q5T Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 500 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4100pF @ 12.5V.A maximum pulsed drain current of 240A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 25V.In order to operate this transistor, a voltage of 25V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
CSD16401Q5T Features
the avalanche energy rating (Eas) is 500 mJ
based on its rated peak drain current 240A.
a 25V drain to source voltage (Vdss)
CSD16401Q5T Applications
There are a lot of Texas Instruments
CSD16401Q5T applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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