CSD16342Q5A

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

5

Length :

4.9mm

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 20A, 8V

Turn On Delay Time :

5.2 ns

Operating Mode :

ENHANCEMENT MODE

Width :

6mm

Additional Feature :

AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

7.1nC @ 4.5V

Number of Elements :

1

Contact Plating :

Tin

Turn-Off Delay Time :

13.4 ns

Feedback Cap-Max (Crss) :

69 pF

Height :

1.1mm

Input Capacitance (Ciss) (Max) @ Vds :

1350pF @ 12.5V

Rise Time :

16.6ns

Peak Reflow Temperature (Cel) :

260

Lead Free :

Contains Lead

Current - Continuous Drain (Id) @ 25°C :

100A Tc

REACH SVHC :

No SVHC

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

10V

Terminal Position :

Dual

Package / Case :

8-PowerTDFN

Radiation Hardening :

No

DS Breakdown Voltage-Min :

25V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 8V

Thickness :

1mm

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

ECCN Code :

EAR99

Threshold Voltage :

850mV

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Transistor Element Material :

SILICON

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

25V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3W

Number of Pins :

8

Fall Time (Typ) :

3.1 ns

JESD-609 Code :

e3

Case Connection :

DRAIN

Power Dissipation-Max :

3W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

100A

Mount :

Surface Mount

Vgs (Max) :

+10V, -8V

Base Part Number :

CSD16342

Series :

NexFET™

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

FET Type :

N-Channel