CSD16340Q3
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- Mfr.Part #
- CSD16340Q3
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 21A/60A 8VSON
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 4.8 ns
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerTDFN
- Power Dissipation-Max :
- 3W Ta
- Turn-Off Delay Time :
- 13.8 ns
- Peak Reflow Temperature (Cel) :
- 260
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Factory Lead Time :
- 12 Weeks
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 9.2nC @ 4.5V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 8V
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Terminal Position :
- Dual
- Height :
- 1.1mm
- Threshold Voltage :
- 850mV
- Rds On (Max) @ Id, Vgs :
- 4.5m Ω @ 20A, 8V
- Base Part Number :
- CSD16340
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 3W
- Length :
- 3.3mm
- FET Type :
- N-Channel
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Rise Time :
- 16.1ns
- Feedback Cap-Max (Crss) :
- 69 pF
- Pin Count :
- 8
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 60A
- Contact Plating :
- Tin
- Nominal Vgs :
- 850 mV
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 25V
- Fall Time (Typ) :
- 5.2 ns
- Gate to Source Voltage (Vgs) :
- 10V
- Pbfree Code :
- yes
- Thickness :
- 1mm
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 60A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Vgs (Max) :
- +10V, -8V
- Width :
- 3.3mm
- JESD-609 Code :
- e3
- Series :
- NexFET™
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 12.5V
- DS Breakdown Voltage-Min :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Lead Free :
- Contains Lead
- Datasheets
- CSD16340Q3
N-Channel Tape & Reel (TR) 4.5m Ω @ 20A, 8V +10V, -8V 1350pF @ 12.5V 9.2nC @ 4.5V 25V 8-PowerTDFN
CSD16340Q3 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1350pF @ 12.5V.This device conducts a continuous drain current (ID) of 60A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 13.8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 10V.Activation of any electrical operation happens at threshold voltage, and this transistor has 850mV threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 25V.This transistor requires a drain-source voltage (Vdss) of 25V.In order to reduce power consumption, this device uses a drive voltage of 2.5V 8V volts (2.5V 8V).
CSD16340Q3 Features
a continuous drain current (ID) of 60A
the turn-off delay time is 13.8 ns
a threshold voltage of 850mV
a 25V drain to source voltage (Vdss)
CSD16340Q3 Applications
There are a lot of Texas Instruments
CSD16340Q3 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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