CSD16327Q3
- Mfr.Part #
- CSD16327Q3
- Manufacturer
- Texas Instruments
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 60A 8VSON
- Stock
- 10,000
- In Stock :
- 10,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 8
- Terminal Form :
- NO LEAD
- Power Dissipation-Max :
- 3W Ta
- Terminal Position :
- Dual
- Contact Plating :
- Tin
- Series :
- NexFET™
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 24A, 8V
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- REACH SVHC :
- Unknown
- Rise Time :
- 15ns
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Vgs (Max) :
- +10V, -8V
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.0065ohm
- Number of Channels :
- 1
- Number of Terminations :
- 5
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 12 Weeks
- Height :
- 1.1mm
- Thickness :
- 1mm
- Power Dissipation :
- 2.8W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 60A
- Transistor Element Material :
- SILICON
- Feedback Cap-Max (Crss) :
- 65 pF
- Additional Feature :
- AVALANCHE RATED
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 3V 8V
- Fall Time (Typ) :
- 6.3 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 8.4nC @ 4.5V
- FET Type :
- N-Channel
- Package / Case :
- 8-PowerTDFN
- Continuous Drain Current (ID) :
- 22A
- Drain to Source Breakdown Voltage :
- 25V
- Width :
- 3.3mm
- Gate to Source Voltage (Vgs) :
- 10V
- Threshold Voltage :
- 1.2V
- Turn-Off Delay Time :
- 13 ns
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 5.3 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 12.5V
- Vgs(th) (Max) @ Id :
- 1.4V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Lead Free :
- Contains Lead
- Length :
- 3.3mm
- Base Part Number :
- CSD16327
- Number of Elements :
- 1
- Datasheets
- CSD16327Q3
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N-Channel Tape & Reel (TR) 4m Ω @ 24A, 8V +10V, -8V 1300pF @ 12.5V 8.4nC @ 4.5V 8-PowerTDFN
CSD16327Q3 Description
CSD16327Q3 is a type of N-channel NexFET? power MOSFET developed based on the established NexFET? technology. It is specially designed to minimize losses in power conversion and optimized for 5V gate drive applications. It is available in the SON package for space-saving. CSD16327Q3 is optimized for control or synchronous FET applications
CSD16327Q3 Features
-
NexFET? technology
-
Optimized for 5-V gate drive
-
Ultralow Qg and Qgd
-
Low thermal resistance
-
Available in the SON package
CSD16327Q3 Applications
-
Point-of-load synchronous buck converter for applications in networking, telecom, and computing systems
-
Optimized for control or synchronous FET applications
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