CSD16325Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

10V

Turn On Delay Time :

10.5 ns

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0029Ohm

DS Breakdown Voltage-Min :

25V

Lead Free :

Contains Lead

Terminal Position :

Dual

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Drain Current-Max (Abs) (ID) :

33A

Lifecycle Status :

NRND (Last Updated: 4 weeks ago)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 12.5V

Case Connection :

DRAIN

Fall Time (Typ) :

12 ns

Thickness :

1mm

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.1 V

Rise Time :

16ns

Power Dissipation-Max :

3.1W Ta

Pulsed Drain Current-Max (IDM) :

200A

Turn-Off Delay Time :

32 ns

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

500 mJ

Contact Plating :

Tin

Continuous Drain Current (ID) :

100A

Mounting Type :

Surface Mount

Additional Feature :

AVALANCHE RATED

Power Dissipation :

3.1W

Height :

1.05mm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Series :

NexFET™

Base Part Number :

CSD16325

ECCN Code :

EAR99

Mount :

Surface Mount

Width :

6mm

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 8V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Pin Count :

8

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Drain to Source Voltage (Vdss) :

25V

Vgs (Max) :

+10V, -8V

Number of Pins :

8

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-PowerTDFN

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Radiation Hardening :

No

Number of Terminations :

5

Length :

5mm

FET Type :

N-Channel

Threshold Voltage :

1.1V

Current - Continuous Drain (Id) @ 25°C :

33A Ta 100A Tc