CSD16325Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

4000pF @ 12.5V

Radiation Hardening :

No

Length :

5mm

Transistor Element Material :

SILICON

Turn On Delay Time :

10.5 ns

Power Dissipation-Max :

3.1W Ta

Avalanche Energy Rating (Eas) :

500 mJ

Pin Count :

8

Package / Case :

8-PowerTDFN

REACH SVHC :

No SVHC

Threshold Voltage :

1.1V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Pbfree Code :

yes

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Lead Free :

Contains Lead

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

Factory Lead Time :

6 Weeks

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

+10V, -8V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

33A Ta 100A Tc

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 8V

Number of Elements :

1

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3.1W

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Width :

6mm

Gate to Source Voltage (Vgs) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Dual Supply Voltage :

25V

Series :

NexFET™

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Drain Current-Max (Abs) (ID) :

33A

Continuous Drain Current (ID) :

100A

Turn-Off Delay Time :

32 ns

Rise Time :

16ns

Number of Terminations :

5

Nominal Vgs :

1.1 V

Packaging :

Cut Tape (CT)

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.0027Ohm

Termination :

SMD/SMT

Thickness :

1mm

Base Part Number :

CSD16325

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

Height :

1.05mm

Element Configuration :

Single

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)