CSD16323Q3C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

21A Ta 60A Tc

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 24A, 8V

Rise Time :

15ns

Thickness :

1mm

Vgs (Max) :

+10V, -8V

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

21A

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 12.5V

Power Dissipation-Max :

3W Ta

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

112A

Terminal Form :

NO LEAD

Avalanche Energy Rating (Eas) :

125 mJ

Drain to Source Breakdown Voltage :

25V

Mount :

Surface Mount

Number of Terminations :

5

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

10V

Lead Free :

Contains Lead

Turn On Delay Time :

5.3 ns

Turn-Off Delay Time :

13 ns

Contact Plating :

Tin

Series :

NexFET™

Width :

3.3mm

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0072Ohm

Power Dissipation :

3W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Pins :

8

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Length :

3.3mm

Base Part Number :

CSD16323

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Mounting Type :

Surface Mount

JESD-30 Code :

S-PDSO-N5

Drain Current-Max (Abs) (ID) :

60A

Fall Time (Typ) :

6.3 ns

Pin Count :

8

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V