CSD16323Q3

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

13 ns

Termination :

SMD/SMT

Element Configuration :

Single

Lead Free :

Contains Lead

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Fall Time (Typ) :

6.3 ns

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Feedback Cap-Max (Crss) :

65 pF

Width :

3.3mm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Pin Count :

8

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Power Dissipation :

3W

Factory Lead Time :

6 Weeks

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

25V

Package / Case :

8-PowerTDFN

Threshold Voltage :

1.1V

Mounting Type :

Surface Mount

Contact Plating :

Tin

Continuous Drain Current (ID) :

60A

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Base Part Number :

CSD16323

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 12.5V

Vgs (Max) :

+10V, -8V

Pbfree Code :

yes

Rise Time :

15ns

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

RoHS Status :

ROHS3 Compliant

Thickness :

1mm

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 24A, 8V

Additional Feature :

AVALANCHE RATED

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Power Dissipation-Max :

3W Ta

Series :

NexFET™

Dual Supply Voltage :

25V

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

5.3 ns

Current - Continuous Drain (Id) @ 25°C :

21A Ta 60A Tc

Nominal Vgs :

1.1 V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.0065ohm

Length :

3.3mm

Height :

1.1mm