CSD16322Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Contact Plating :

Tin

Width :

6mm

Length :

5mm

Turn On Delay Time :

6.1 ns

Terminal Form :

NO LEAD

Base Part Number :

CSD16322

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 8V

DS Breakdown Voltage-Min :

25V

Input Capacitance (Ciss) (Max) @ Vds :

1365pF @ 12.5V

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.007Ohm

Continuous Drain Current (ID) :

97A

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Series :

NexFET™

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

1.1 V

Number of Elements :

1

Number of Pins :

8

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Threshold Voltage :

1.1V

Power Dissipation :

3.1W

RoHS Status :

ROHS3 Compliant

Thickness :

1mm

Drain to Source Voltage (Vdss) :

25V

Gate to Source Voltage (Vgs) :

10V

Pin Count :

8

Turn-Off Delay Time :

12.3 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Element Configuration :

Single

Mount :

Surface Mount

Lifecycle Status :

NRND (Last Updated: 4 weeks ago)

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

3.7 ns

Rise Time :

10.7ns

Number of Terminations :

5

Lead Free :

Contains Lead

Vgs (Max) :

+10V, -8V

ECCN Code :

EAR99

Case Connection :

DRAIN

Power Dissipation-Max :

3.1W Ta

Height :

1.05mm

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Current - Continuous Drain (Id) @ 25°C :

21A Ta 97A Tc

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE