CSD16322Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

1.1 V

Input Capacitance (Ciss) (Max) @ Vds :

1365pF @ 12.5V

Pbfree Code :

yes

Base Part Number :

CSD16322

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 8V

Mounting Type :

Surface Mount

Dual Supply Voltage :

25V

Series :

NexFET™

Vgs (Max) :

+10V, -8V

Length :

5mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.1V

Additional Feature :

AVALANCHE RATED

Feedback Cap-Max (Crss) :

70 pF

Terminal Position :

Dual

Termination :

SMD/SMT

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Contact Plating :

Tin

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

21A Ta 97A Tc

Power Dissipation-Max :

3.1W Ta

Height :

1.05mm

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

Turn-Off Delay Time :

12.3 ns

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

97A

Number of Pins :

8

Fall Time (Typ) :

3.7 ns

Pin Count :

8

Width :

6mm

Radiation Hardening :

No

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Mount :

Surface Mount

Rise Time :

10.7ns

Number of Elements :

1

Thickness :

1mm

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

9.7nC @ 4.5V

Turn On Delay Time :

6.1 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Factory Lead Time :

6 Weeks

Lead Free :

Contains Lead

REACH SVHC :

No SVHC

Power Dissipation :

3.1W

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.007Ohm

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant