CSD16321Q5C

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Number of Pins :

8

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED

Packaging :

Tape and Reel (TR)

Rise Time :

15ns

Contact Plating :

Tin

Power Dissipation :

3.1W

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

200A

Gate to Source Voltage (Vgs) :

10V

Thickness :

1mm

Number of Elements :

1

Height :

1.05mm

Terminal Position :

Dual

Vgs (Max) :

+10V, -8V

Mount :

Surface Mount

ECCN Code :

EAR99

Turn-Off Delay Time :

27 ns

Drain to Source Voltage (Vdss) :

25V

Length :

5mm

Radiation Hardening :

No

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Power Dissipation-Max :

3.1W Ta

JESD-609 Code :

e3

Number of Terminations :

5

Base Part Number :

CSD16321

Threshold Voltage :

1.1V

Pin Count :

8

Continuous Drain Current (ID) :

100A

Nominal Vgs :

1.1 V

Package / Case :

8-PowerTDFN

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Element Configuration :

Single

Fall Time (Typ) :

17 ns

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Transistor Element Material :

SILICON

Lifecycle Status :

NRND (Last Updated: 4 weeks ago)

Width :

6mm

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

9 ns

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 8V

Operating Temperature :

-55°C~150°C TJ

Series :

NexFET™

FET Type :

N-Channel

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 12.5V