CSD16321Q5

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

27 ns

Dual Supply Voltage :

25V

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

5

Fall Time (Typ) :

17 ns

Gate to Source Voltage (Vgs) :

10V

Threshold Voltage :

1.1V

Width :

6mm

Number of Elements :

1

Termination :

SMD/SMT

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Thickness :

1mm

Turn On Delay Time :

9 ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

200A

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 4.5V

Mounting Type :

Surface Mount

Pin Count :

8

Case Connection :

DRAIN

Series :

NexFET™

Power Dissipation :

3.1W

Continuous Drain Current (ID) :

100A

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 25A, 8V

Drain-source On Resistance-Max :

0.0035Ohm

Package / Case :

8-PowerTDFN

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

Terminal Position :

Dual

Contact Plating :

Tin

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 12.5V

Current - Continuous Drain (Id) @ 25°C :

31A Ta 100A Tc

Length :

5mm

Drive Voltage (Max Rds On,Min Rds On) :

3V 8V

Vgs (Max) :

+10V, -8V

Power Dissipation-Max :

3.1W Ta

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

6 Weeks

Rise Time :

15ns

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Base Part Number :

CSD16321

Drain to Source Breakdown Voltage :

25V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Height :

1.05mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Pins :

8

Nominal Vgs :

1.1 V