CSD15571Q2

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

4.1 ns

Mount :

Surface Mount

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

6-WDFN Exposed Pad

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

22A

Power Dissipation :

2.5W

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

22A Ta

Width :

2mm

Number of Terminations :

6

Rise Time :

17.2ns

Series :

NexFET™

Rds On (Max) @ Id, Vgs :

15m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Element Configuration :

Single

Lead Free :

Lead Free

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

20V

Turn-Off Delay Time :

9.9 ns

Transistor Application :

SWITCHING

Factory Lead Time :

6 Weeks

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Number of Elements :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

6

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

419pF @ 10V

Base Part Number :

CSD15571

Turn On Delay Time :

17.2 ns

Packaging :

Tape and Reel (TR)

Number of Channels :

1

Length :

2mm

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

1.9V @ 250μA

Thickness :

750μm

JESD-609 Code :

e4