CSD13381F4T

Manufacturer :

Texas Instruments

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Factory Lead Time :

6 Weeks

Drain-source On Resistance-Max :

0.4Ohm

Power Dissipation :

500mW

Vgs(th) (Max) @ Id :

1.1V @ 250μA

Terminal Position :

BOTTOM

Turn-Off Delay Time :

11 ns

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

3.7 ns

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Number of Terminations :

3

Package / Case :

3-XFDFN

Continuous Drain Current (ID) :

2.1A

Height :

350μm

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 6V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 500mA, 4.5V

Fall Time (Typ) :

3.8 ns

REACH SVHC :

No SVHC

Threshold Voltage :

850mV

Number of Pins :

3

Mount :

Surface Mount

Number of Elements :

1

Element Configuration :

Single

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

7A

Width :

635μm

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Rise Time :

1.5ns

Terminal Form :

NO LEAD

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Series :

FemtoFET™

Length :

1.035mm

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

12V

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Gate to Source Voltage (Vgs) :

8V

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

500mW Ta

Base Part Number :

CSD13381