CSD13381F4
- Mfr.Part #
- CSD13381F4
- Manufacturer
- Texas Instruments
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 12V 2.1A 3PICOSTAR
- Stock
- 50,000
- In Stock :
- 50,000
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- Manufacturer :
- Texas Instruments
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 3-XFDFN
- Power Dissipation :
- 500mW
- Fall Time (Typ) :
- 3.8 ns
- Vgs(th) (Max) @ Id :
- 1.1V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 1.4nC @ 4.5V
- Number of Elements :
- 1
- Terminal Form :
- NO LEAD
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 2.1A
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Turn On Delay Time :
- 3.7 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 200pF @ 6V
- Series :
- NexFET™
- Length :
- 1.035mm
- Number of Pins :
- 3
- Operating Mode :
- 0.85
- Mount :
- Surface Mount
- Rise Time :
- 1.5ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 12V
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 500mA, 4.5V
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 8V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- CSD13381
- Turn-Off Delay Time :
- 11 ns
- Width :
- 635μm
- Terminal Position :
- BOTTOM
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 7A
- Power Dissipation-Max :
- 500mW Ta
- Datasheets
- CSD13381F4

N-Channel Tape & Reel (TR) 180m Ω @ 500mA, 4.5V 200pF @ 6V 1.4nC @ 4.5V 3-XFDFN
CSD13381F4 Description
This 140m Ω, 12V N-channel FemtoFET floor MOSFET technology CSD13381F4 is designed and optimized to minimize footprint in many handheld and mobile applications. This technology can replace the standard small signal MOSFET and reduce the footprint by at least 60%.
CSD13381F4 Features
? Low on-resistance
? Low Qg and Qgd
? Low threshold voltage
? Ultra-small footprint (0402 case size)
– 1.0 mm × 0.6 mm
? Ultra-low profile
– Maximum height: 0.36-mm
? Integrated ESD protection diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
? Lead and halogen free
? RoHS compliant
CSD13381F4 Applications
? Optimized for load switch applications
? Optimized for general purpose switching applications
? Single-cell battery applications
? Handheld and mobile applications
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