BUZ73HXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

40ns

Power Dissipation-Max :

40W Tc

Packaging :

Tube

Turn-Off Delay Time :

55 ns

Number of Elements :

1

Radiation Hardening :

No

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

28A

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

40W

JESD-30 Code :

R-PSFM-T3

Drain to Source Voltage (Vdss) :

200V

Package / Case :

TO-220-3

Published :

2005

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Drain Current-Max (Abs) (ID) :

7A

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.4Ohm

Terminal Position :

Single

ECCN Code :

EAR99

Mount :

Through Hole

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

7A

Fall Time (Typ) :

30 ns

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Number of Terminations :

3

Series :

SIPMOS®

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 1mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

200V