BUZ73AHXKSA1
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- Mfr.Part #
- BUZ73AHXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 300
- In Stock ：
- 300
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Power Dissipation (Max) :
- 40W (Tc)
- Drain to Source Voltage (Vdss) :
- 200 V
- Channel Type :
- N
- Supplier Device Package :
- PG-TO220-3-1
- Product Status :
- Active
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package :
- Bulk
- Series :
- SIPMOS®
- Power Dissipation :
- 40
- Package / Case :
- TO-220-3
- Technology :
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds :
- 530 pF @ 25 V
- Continuous Drain Current Id :
- 5.5
- Rds On (Max) @ Id, Vgs :
- 600mOhm @ 4.5A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A (Tc)
- Datasheets
- BUZ73AHXKSA1
MOSFET (Metal Oxide) N-Channel 600mOhm @ 4.5A, 10V ±20V 530 pF @ 25 V 200 V TO-220-3
BUZ73AHXKSA1 Overview
A device's maximum input capacitance is 530 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 200 V drain to source voltage (Vdss).
BUZ73AHXKSA1 Features
a 200 V drain to source voltage (Vdss)
BUZ73AHXKSA1 Applications
There are a lot of Infineon
BUZ73AHXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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