BUZ73A H

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Compliant

Published :

2005

Avalanche Energy Rating (Eas) :

120 mJ

Pbfree Code :

yes

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.6Ohm

Drain Current-Max (Abs) (ID) :

5.5A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Series :

SIPMOS®

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

200V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.5A, 10V

Power Dissipation-Max :

40W Tc

Pulsed Drain Current-Max (IDM) :

22A

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 1mA

Pin Count :

3

Surface Mount :

No

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Number of Elements :

1

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V