BUZ73

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

MATTE TIN

Nominal Vgs :

3 V

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.5A, 10V

Drain-source On Resistance-Max :

0.6Ohm

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Element Configuration :

Single

Number of Terminations :

3

Power Dissipation :

40W

Number of Pins :

3

Termination :

Through Hole

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

5.8A

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

22A

Current Rating :

5.5A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Voltage - Rated DC :

200V

Fall Time (Typ) :

30 ns

Lead Free :

Lead Free

Series :

SIPMOS®

Package / Case :

TO-220-3

Dual Supply Voltage :

200V

Continuous Drain Current (ID) :

5.5A

Vgs (Max) :

±20V

Rise Time :

40ns

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Lead Pitch :

2.54mm

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

55 ns

Published :

2000

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

REACH SVHC :

No SVHC

Power Dissipation-Max :

40W Tc

Number of Elements :

1