BUZ73A
- Mfr.Part #
- BUZ73A
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.5A TO220-3
- Stock
- 22,253
- In Stock :
- 22,253
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- SIPMOS®
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Transistor Application :
- SWITCHING
- Published :
- 2000
- Packaging :
- Tube
- Drain-source On Resistance-Max :
- 0.6Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Dual Supply Voltage :
- 200V
- Rise Time :
- 40ns
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 22A
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 530pF @ 25V
- Terminal Finish :
- MATTE TIN
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 4.5A, 10V
- JEDEC-95 Code :
- TO-220AB
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 5.5A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 30 ns
- Number of Terminations :
- 3
- Lead Pitch :
- 2.54mm
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 5.5A
- Mount :
- Through Hole
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 55 ns
- Power Dissipation :
- 40W
- Termination :
- Through Hole
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 40W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Current Rating :
- 5.5A
- Drain to Source Breakdown Voltage :
- 200V
- Nominal Vgs :
- 3 V
- Voltage - Rated DC :
- 200V
- Drain Current-Max (Abs) (ID) :
- 5.8A
- Number of Pins :
- 3
- Datasheets
- BUZ73A

N-Channel Tube 600m Ω @ 4.5A, 10V ±20V 530pF @ 25V TO-220-3
BUZ73A Description
BUZ73A is a 200v N-channel SIPMOS? Power Transistor. A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET BUZ73A is in the TO-220-3 package with 40W power dissipation.
BUZ73A Features
-
N channel
-
Enhancement mode
-
Avalanche-rated
-
Drain- source breakdown voltage: 200V
-
Package: TO-220-3
BUZ73A Applications
-
Consumer electronics
-
Radio-frequency (RF) applications
-
Transportation technology
-
Automotive industry
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