BUZ73AH3046

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

200V

Drain-source On Resistance-Max :

0.6Ohm

Pulsed Drain Current-Max (IDM) :

22A

Avalanche Energy Rating (Eas) :

120 mJ

Vgs (Max) :

±20V

Series :

SIPMOS®

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 1mA

Package / Case :

TO-220-3

Number of Elements :

1

Published :

2005

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

600m Ω @ 4.5A, 10V

Surface Mount :

No

Mounting Type :

Through Hole

Terminal Position :

Single

Power Dissipation-Max :

40W Tc

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5.5A

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Additional Feature :

AVALANCHE RATED

Reach Compliance Code :

Compliant

Input Capacitance (Ciss) (Max) @ Vds :

530pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

200V

FET Type :

N-Channel