BUL45G
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- Mfr.Part #
- BUL45G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 400V 5A TO220
- Stock
- 13,085
- In Stock ：
- 13,085
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 14
- Current - Collector Cutoff (Max) :
- 100μA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 9V
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 14 @ 300mA 5V
- REACH SVHC :
- No SVHC
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 400V
- Gain Bandwidth Product :
- 12MHz
- Pin Count :
- 3
- Max Power Dissipation :
- 75W
- Transistor Application :
- SWITCHING
- Case Connection :
- COLLECTOR
- Length :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 890mV
- Transition Frequency :
- 12MHz
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 75W
- JEDEC-95 Code :
- TO-220AB
- Frequency :
- 12MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5A
- Collector Emitter Breakdown Voltage :
- 400V
- Transistor Type :
- NPN
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Height :
- 6.35mm
- Published :
- 2006
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Series :
- SWITCHMODE™
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 700V
- Width :
- 6.35mm
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400V
- Current Rating :
- 5A
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 400mA, 2A
- Polarity/Channel Type :
- NPN
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- JESD-609 Code :
- e3
- Base Part Number :
- BUL45
- Datasheets
- BUL45G
BUL45G Documents
NPN -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL45G Overview
This device has a DC current gain of 14 @ 300mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 890mV.A VCE saturation (Max) of 400mV @ 400mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 12MHz.A maximum collector current of 5A volts is possible.
BUL45G Features
the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 890mV
the vce saturation(Max) is 400mV @ 400mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 12MHz
BUL45G Applications
There are a lot of ON Semiconductor
BUL45G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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