BUL416T
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- Mfr.Part #
- BUL416T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 6A TO220
- Stock
- 2,397
- In Stock ：
- 2,397
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Single
- Pin Count :
- 3
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 18
- Max Collector Current :
- 6A
- Power - Max :
- 110W
- JESD-609 Code :
- e3
- Base Part Number :
- BUL416
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Mount :
- Through Hole
- Max Power Dissipation :
- 110W
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 800V
- Emitter Base Voltage (VEBO) :
- 9V
- Packaging :
- Tube
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.33A, 4A
- JEDEC-95 Code :
- TO-220AB
- Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 250μA
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 800V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Datasheets
- BUL416T
BUL416T Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL416T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.
BUL416T Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 1.5V @ 1.33A, 4A
the emitter base voltage is kept at 9V
BUL416T Applications
There are a lot of STMicroelectronics
BUL416T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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