BUL416T
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- Mfr.Part #
- BUL416T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 6A TO220
- Stock
- 2,397
- In Stock ：
- 2,397
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Collector Emitter Breakdown Voltage :
- 800V
- JESD-609 Code :
- e3
- Power - Max :
- 110W
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 800V
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.33A, 4A
- Factory Lead Time :
- 8 Weeks
- Terminal Position :
- Single
- Max Collector Current :
- 6A
- Max Power Dissipation :
- 110W
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 250μA
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Pin Count :
- 3
- hFE Min :
- 18
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BUL416
- Number of Terminations :
- 3
- Datasheets
- BUL416T
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL416T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.
BUL416T Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 1.5V @ 1.33A, 4A
the emitter base voltage is kept at 9V
BUL416T Applications
There are a lot of STMicroelectronics
BUL416T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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