BUL416T
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- Mfr.Part #
- BUL416T
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 6A TO220
- Stock
- 2,397
- In Stock ：
- 2,397
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 6A
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 110W
- Collector Emitter Voltage (VCEO) :
- 800V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 250μA
- Packaging :
- Tube
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 800V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-220AB
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BUL416
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.33A, 4A
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- Power - Max :
- 110W
- Terminal Position :
- Single
- Mount :
- Through Hole
- Number of Elements :
- 1
- Number of Terminations :
- 3
- hFE Min :
- 18
- Datasheets
- BUL416T
BUL416T Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL416T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.
BUL416T Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 1.5V @ 1.33A, 4A
the emitter base voltage is kept at 9V
BUL416T Applications
There are a lot of STMicroelectronics
BUL416T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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