BUL416
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- Mfr.Part #
- BUL416
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 6A TO220
- Stock
- 17,728
- In Stock ：
- 17,728
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- Contact Plating :
- Tin
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 800V
- Emitter Base Voltage (VEBO) :
- 9V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 800V
- Current - Collector Cutoff (Max) :
- 250μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 8 Weeks
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.33A, 4A
- Number of Terminations :
- 3
- Mount :
- Through Hole
- hFE Min :
- 18
- Max Power Dissipation :
- 110W
- Pin Count :
- 3
- Base Part Number :
- BUL416
- Max Collector Current :
- 6A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Number of Pins :
- 3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Power - Max :
- 110W
- Lead Free :
- Lead Free
- Datasheets
- BUL416
BUL416 Documents
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL416T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.
BUL416T Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 1.5V @ 1.33A, 4A
the emitter base voltage is kept at 9V
BUL416T Applications
There are a lot of STMicroelectronics
BUL416T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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