BUL416
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- Mfr.Part #
- BUL416
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 6A TO220
- Stock
- 17,728
- In Stock ：
- 17,728
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-220-3
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.33A, 4A
- Power - Max :
- 110W
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 18 @ 700mA 5V
- hFE Min :
- 18
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 9V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 800V
- Factory Lead Time :
- 8 Weeks
- Configuration :
- Single
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tube
- Number of Terminations :
- 3
- JEDEC-95 Code :
- TO-220AB
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Max Collector Current :
- 6A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Base Part Number :
- BUL416
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 800V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 250μA
- Terminal Position :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Max Power Dissipation :
- 110W
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Datasheets
- BUL416
NPN 150°C TJ 250μA 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
BUL416T Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 18 @ 700mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1.33A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.During maximum operation, collector current can be as low as 6A volts.
BUL416T Features
the DC current gain for this device is 18 @ 700mA 5V
the vce saturation(Max) is 1.5V @ 1.33A, 4A
the emitter base voltage is kept at 9V
BUL416T Applications
There are a lot of STMicroelectronics
BUL416T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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