BUL45D2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Terminations :

3

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Pbfree Code :

yes

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

400V

Collector Emitter Breakdown Voltage :

400V

Surface Mount :

No

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Length :

10.28mm

Packaging :

Tube

Radiation Hardening :

No

Transition Frequency :

13MHz

Power Dissipation :

75W

Package / Case :

TO-220-3

Number of Elements :

1

Factory Lead Time :

2 Weeks

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Width :

4.82mm

Polarity/Channel Type :

NPN

Contact Plating :

Tin

Case Connection :

COLLECTOR

Current - Collector Cutoff (Max) :

100μA

Voltage - Rated DC :

700V

REACH SVHC :

No SVHC

Weight :

4.535924g

Current Rating :

5A

Gain Bandwidth Product :

13MHz

Emitter Base Voltage (VEBO) :

12V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Max Collector Current :

5A

Lead Free :

Lead Free

Base Part Number :

BUL45

Transistor Type :

NPN

hFE Min :

22

Collector Base Voltage (VCBO) :

700V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Max Power Dissipation :

75W

Frequency :

13MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

460mV

Height :

9.28mm

Published :

2001