BUL45D2G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Surface Mount :

No

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

400V

Weight :

4.535924g

Collector Base Voltage (VCBO) :

700V

Polarity/Channel Type :

NPN

Width :

4.82mm

Gain Bandwidth Product :

13MHz

Mounting Type :

Through Hole

ECCN Code :

EAR99

Length :

10.28mm

JESD-609 Code :

e3

Number of Pins :

3

Max Power Dissipation :

75W

Current - Collector Cutoff (Max) :

100μA

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Voltage - Rated DC :

700V

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Base Part Number :

BUL45

Number of Elements :

1

Transistor Type :

NPN

Transistor Application :

SWITCHING

Operating Temperature :

-65°C~150°C TJ

Transistor Element Material :

SILICON

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Published :

2001

Factory Lead Time :

2 Weeks

Frequency :

13MHz

Element Configuration :

Single

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Collector Emitter Saturation Voltage :

460mV

Emitter Base Voltage (VEBO) :

12V

Height :

9.28mm

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Collector Emitter Voltage (VCEO) :

400V

Transition Frequency :

13MHz

Max Collector Current :

5A

Contact Plating :

Tin

hFE Min :

22

Power Dissipation :

75W

Current Rating :

5A

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Number of Terminations :

3

Pin Count :

3