BUL45D2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100μA

Weight :

4.535924g

Width :

4.82mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

13MHz

hFE Min :

22

Voltage - Rated DC :

700V

Collector Emitter Saturation Voltage :

460mV

Emitter Base Voltage (VEBO) :

12V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Pin Count :

3

Lead Free :

Lead Free

Collector Emitter Breakdown Voltage :

400V

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Packaging :

Tube

Base Part Number :

BUL45

Mounting Type :

Through Hole

Operating Temperature :

-65°C~150°C TJ

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Current Rating :

5A

Collector Base Voltage (VCBO) :

700V

Surface Mount :

No

Transition Frequency :

13MHz

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Pbfree Code :

yes

Power Dissipation :

75W

Max Power Dissipation :

75W

Number of Terminations :

3

Element Configuration :

Single

Frequency :

13MHz

Contact Plating :

Tin

Radiation Hardening :

No

ECCN Code :

EAR99

Collector Emitter Voltage (VCEO) :

400V

Max Collector Current :

5A

Length :

10.28mm

Transistor Type :

NPN

Published :

2001

Polarity/Channel Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Height :

9.28mm

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)