BUL45D2

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Gain Bandwidth Product :

13MHz

Weight :

4.535924g

JESD-609 Code :

e3

Max Power Dissipation :

75W

hFE Min :

22

Transistor Type :

NPN

Collector Base Voltage (VCBO) :

700V

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

13MHz

Case Connection :

COLLECTOR

Vce Saturation (Max) @ Ib, Ic :

500mV @ 400mA, 2A

Max Collector Current :

5A

Pbfree Code :

yes

Factory Lead Time :

2 Weeks

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

460mV

Base Part Number :

BUL45

Element Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 2A 1V

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

400V

Lead Free :

Lead Free

Published :

2001

Number of Elements :

1

Packaging :

Tube

Additional Feature :

BUILT-IN EFFICIENT ANTISATURATION NETWORK

Number of Pins :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Length :

10.28mm

Radiation Hardening :

No

Surface Mount :

No

Width :

4.82mm

Number of Terminations :

3

Package / Case :

TO-220-3

Current Rating :

5A

REACH SVHC :

No SVHC

Power Dissipation :

75W

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Frequency :

13MHz

Voltage - Rated DC :

700V

Height :

9.28mm

Emitter Base Voltage (VEBO) :

12V

Operating Temperature :

-65°C~150°C TJ

Polarity/Channel Type :

NPN

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

400V

Current - Collector Cutoff (Max) :

100μA