BU508AW
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- Mfr.Part #
- BU508AW
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 8,547
- In Stock ：
- 8,547
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 700V
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 125W
- Current - Collector Cutoff (Max) :
- 200μA
- Contact Plating :
- Tin
- Power Dissipation :
- 125W
- Element Configuration :
- Single
- Length :
- 15.75mm
- Package / Case :
- TO-247-3
- Height :
- 24.45mm
- Collector Emitter Saturation Voltage :
- 1V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- hFE Min :
- 10
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Base Part Number :
- BU508
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 8A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 9V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 700V
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 5.15mm
- Datasheets
- BU508AW
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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