BU508AFTBTU
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- Mfr.Part #
- BU508AFTBTU
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 700V 5A TO3PF
- Stock
- 22,863
- In Stock ：
- 22,863
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2.25 @ 4.5A 5V
- Current - Collector (Ic) (Max) :
- 5A
- Power - Max :
- 60W
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 700V
- Base Part Number :
- BU508
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Package / Case :
- TO-3P-3 Full Pack
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 2A, 4.5A
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1mA
- Supplier Device Package :
- TO-3PF
- Datasheets
- BU508AFTBTU
NPN 150°C TJ 1mA TO-3P-3 Full Pack Tube Through Hole
BU508AFTBTU Overview
In this device, the DC current gain is 2.25 @ 4.5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 2A, 4.5A.Supplier device package TO-3PF comes with the product.The device exhibits a collector-emitter breakdown at 700V.
BU508AFTBTU Features
the DC current gain for this device is 2.25 @ 4.5A 5V
the vce saturation(Max) is 1V @ 2A, 4.5A
the supplier device package of TO-3PF
BU508AFTBTU Applications
There are a lot of ON Semiconductor
BU508AFTBTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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