BU508A
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- Mfr.Part #
- BU508A
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 13,289
- In Stock ：
- 13,289
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 700V
- hFE Min :
- 10
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 125W
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Height :
- 24.45mm
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Junction Temperature (Tj) :
- 150°C
- Width :
- 5.15mm
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Collector Emitter Voltage (VCEO) :
- 700V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 9V
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 200μA
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Length :
- 15.75mm
- Pin Count :
- 3
- Package / Case :
- TO-247-3
- Max Collector Current :
- 8A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Base Part Number :
- BU508
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Power Dissipation :
- 125W
- Datasheets
- BU508A
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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