BU508AF
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- Mfr.Part #
- BU508AF
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO3PF
- Stock
- 5,265
- In Stock ：
- 5,265
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 50W
- Base Part Number :
- BU508
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Mount :
- Through Hole
- Max Power Dissipation :
- 50W
- Max Collector Current :
- 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 700V
- Collector Base Voltage (VCBO) :
- 9V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Packaging :
- Tube
- Case Connection :
- Isolated
- Package / Case :
- ISOWATT218FX
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Collector Emitter Breakdown Voltage :
- 700V
- Current - Collector Cutoff (Max) :
- 200μA
- Transistor Type :
- NPN
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Datasheets
- BU508AF
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
BU508AF Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.
BU508AF Features
the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AF Applications
There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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