BU508AF
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- Mfr.Part #
- BU508AF
- Manufacturer
- STMicroelectronics
- Package / Case
- ISOWATT218FX
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO3PF
- Stock
- 5,265
- In Stock ：
- 5,265
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Base Part Number :
- BU508
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 700V
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 8A
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 200μA
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 9V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Emitter Base Voltage (VEBO) :
- 9V
- Max Power Dissipation :
- 50W
- Package / Case :
- ISOWATT218FX
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Power Dissipation :
- 50W
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 700V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Number of Pins :
- 3
- Case Connection :
- Isolated
- Packaging :
- Tube
- Datasheets
- BU508AF
BU508AF Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN ISOWATT218FX Tube Through Hole
BU508AF Overview
In this device, the DC current gain is 10 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 1.6A, 4.5A.Keeping the emitter base voltage at 9V allows for a high level of efficiency.Maximum collector currents can be below 8A volts.
BU508AF Features
the DC current gain for this device is 10 @ 100mA 5V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AF Applications
There are a lot of STMicroelectronics
BU508AF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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