BU508A
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- Mfr.Part #
- BU508A
- Manufacturer
- Motorola
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 3,637
- In Stock ：
- 3,637
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- Manufacturer :
- Motorola
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Base Part Number :
- BU508
- Collector Emitter Breakdown Voltage :
- 700V
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- JESD-609 Code :
- e3
- Max Junction Temperature (Tj) :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 125W
- Max Power Dissipation :
- 125W
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Height :
- 24.45mm
- hFE Min :
- 10
- Max Collector Current :
- 8A
- Package / Case :
- TO-247-3
- Contact Plating :
- Tin
- Length :
- 15.75mm
- Collector Emitter Voltage (VCEO) :
- 700V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 9V
- Mount :
- Through Hole
- Packaging :
- Tube
- Factory Lead Time :
- 8 Weeks
- Width :
- 5.15mm
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 200μA
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Datasheets
- BU508A
BU508A Documents
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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