BU508A
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- Mfr.Part #
- BU508A
- Manufacturer
- Motorola
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN 700V 8A TO247-3
- Stock
- 3,637
- In Stock ：
- 3,637
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- Manufacturer :
- Motorola
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1.6A, 4.5A
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Width :
- 5.15mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 700V
- Base Part Number :
- BU508
- Collector Emitter Breakdown Voltage :
- 700V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 100mA 5V
- Height :
- 24.45mm
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Length :
- 15.75mm
- Max Power Dissipation :
- 125W
- Collector Emitter Saturation Voltage :
- 1V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Mount :
- Through Hole
- Package / Case :
- TO-247-3
- Max Junction Temperature (Tj) :
- 150°C
- Transistor Element Material :
- SILICON
- hFE Min :
- 10
- JESD-609 Code :
- e3
- Max Collector Current :
- 8A
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 9V
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 125W
- Current - Collector Cutoff (Max) :
- 200μA
- Datasheets
- BU508A
NPN 150°C TJ 200μA 1 Elements 3 Terminations SILICON NPN TO-247-3 Tube Through Hole
BU508AW Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 100mA 5V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.When VCE saturation is 1V @ 1.6A, 4.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 9V can achieve high levels of efficiency.A maximum collector current of 8A volts can be achieved.
BU508AW Features
the DC current gain for this device is 10 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1.6A, 4.5A
the emitter base voltage is kept at 9V
BU508AW Applications
There are a lot of STMicroelectronics
BU508AW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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