BST52,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Packaging :

Tape and Reel (TR)

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500μA, 500mA

Collector Base Voltage (VCBO) :

90V

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

80V

Contact Plating :

Tin

Collector Emitter Saturation Voltage :

1.3V

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-F3

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

200MHz

Series :

Automotive, AEC-Q101

Operating Temperature :

150°C TJ

Transition Frequency :

200MHz

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

80V

Base Part Number :

BST52

Emitter Base Voltage (VEBO) :

5V

Turn On Time-Max (ton) :

400ns

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Max Breakdown Voltage :

80V

Power - Max :

1.3W

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Terminal Form :

Flat

Polarity :

NPN

Element Configuration :

Single

Mount :

Surface Mount

Factory Lead Time :

4 Weeks

Case Connection :

COLLECTOR

Max Power Dissipation :

1.3W

Pin Count :

3

Max Collector Current :

1A

Package / Case :

TO-243AA

Published :

2001

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING