BST52,115

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

150°C TJ

Max Junction Temperature (Tj) :

150°C

Emitter Base Voltage (VEBO) :

5V

Configuration :

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Height :

1.6mm

hFE Min :

1000

Collector Emitter Saturation Voltage :

1.3V

Number of Elements :

1

Base Part Number :

BST52

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Transistor Application :

SWITCHING

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Transition Frequency :

200MHz

Power Dissipation :

1.3W

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

2000 @ 500mA 10V

Collector Emitter Breakdown Voltage :

80V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Emitter Voltage (VCEO) :

80V

Transistor Type :

NPN - Darlington

Number of Terminations :

3

Pin Count :

3

JESD-609 Code :

e3

Terminal Position :

Single

Transistor Element Material :

SILICON

Terminal Form :

Flat

Vce Saturation (Max) @ Ib, Ic :

1.3V @ 500μA, 500mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Frequency - Transition :

200MHz

Mounting Type :

Surface Mount

Published :

2001

Current - Collector Cutoff (Max) :

50nA

Package / Case :

TO-243AA

Series :

Automotive, AEC-Q101

ECCN Code :

EAR99

Case Connection :

COLLECTOR

Turn On Time-Max (ton) :

400ns

Qualification Status :

Not Qualified

Max Collector Current :

1A

Collector Base Voltage (VCBO) :

90V

Polarity :

NPN

Terminal Finish :

Tin (Sn)

Ambient Temperature Range High :

150°C