BST50,115
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- Mfr.Part #
- BST50,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 45V 1A SOT89
- Stock
- 746
- In Stock ：
- 746
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Supplier Device Package :
- SOT-89
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 1.3W
- Contact Plating :
- Tin
- Height :
- 1.6mm
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Surface Mount
- Min Operating Temperature :
- -65°C
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Elements :
- 1
- Number of Pins :
- 3
- Package / Case :
- TO-243AA
- Max Power Dissipation :
- 1.3W
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Frequency - Transition :
- 200MHz
- Width :
- 2.6mm
- Length :
- 4.6mm
- Lead Free :
- Lead Free
- Current - Collector (Ic) (Max) :
- 1A
- Collector Emitter Saturation Voltage :
- 1.3V
- Max Operating Temperature :
- 150°C
- Voltage - Collector Emitter Breakdown (Max) :
- 45V
- REACH SVHC :
- No SVHC
- Polarity :
- NPN
- Max Collector Current :
- 1A
- Weight :
- 130.492855mg
- Published :
- 2001
- Max Breakdown Voltage :
- 45V
- Power - Max :
- 1.3W
- Current - Collector Cutoff (Max) :
- 50nA
- Collector Emitter Breakdown Voltage :
- 45V
- Base Part Number :
- BST50
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 500mA 10V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Datasheets
- BST50,115
SOT89.jpg)
NPN - Darlington 150°C TJ 50nA 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
BST50,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 500mA 10V DC current gain.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 45V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 45V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 1A volts.
BST50,115 Features
the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
BST50,115 Applications
There are a lot of Nexperia USA Inc.
BST50,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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