BST51,135

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Mfr.Part #
BST51,135
Manufacturer
Nexperia
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS NPN DARL 60V 1A SOT89
Stock
139,360
In Stock :
139,360

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Manufacturer :
Nexperia
Product Category :
Transistors - Bipolar (BJT) - Single
Max Power Dissipation :
1.3W
Case Connection :
COLLECTOR
Transistor Type :
NPN - Darlington
Terminal Form :
Flat
Polarity :
NPN
Series :
Automotive, AEC-Q101
Packaging :
Tape and Reel (TR)
Package / Case :
TO-243AA
Mount :
Surface Mount
Number of Terminations :
3
Transistor Element Material :
SILICON
Operating Temperature :
150°C TJ
Collector Emitter Saturation Voltage :
1.3V
Power - Max :
1.3W
Current - Collector Cutoff (Max) :
50nA
JESD-609 Code :
e3
ECCN Code :
EAR99
Number of Elements :
1
Factory Lead Time :
4 Weeks
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Number of Pins :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Contact Plating :
Tin
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 500mA 10V
Collector Emitter Voltage (VCEO) :
60V
Radiation Hardening :
No
Pin Count :
3
Max Collector Current :
1A
Element Configuration :
Single
Frequency - Transition :
200MHz
Emitter Base Voltage (VEBO) :
5V
Published :
2001
JESD-30 Code :
R-PSSO-F3
Collector Base Voltage (VCBO) :
80V
Base Part Number :
BST51
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 500μA, 500mA
Collector Emitter Breakdown Voltage :
60V
Transition Frequency :
200MHz
Max Breakdown Voltage :
60V
Mounting Type :
Surface Mount
Datasheets
BST51,135
Introducing Transistors - Bipolar (BJT) - Single Nexperia BST51,135 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-243AA, Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:4, Base Part Number:BST51, Mounting Type:Surface Mount, BST51,135 pinout, BST51,135 datasheet PDF, BST51,135 amp .Beyond Transistors - Bipolar (BJT) - Single Nexperia BST51,135 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Nexperia BST51,135


NPN - Darlington 150°C TJ 50nA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount

BST51,135 Overview


DC current gain in this device equals 2000 @ 500mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1.3V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.3V @ 500μA, 500mA.An emitter's base voltage can be kept at 5V to gain high efficiency.As a result, the part has a transition frequency of 200MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.

BST51,135 Features


the DC current gain for this device is 2000 @ 500mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz


BST51,135 Applications


There are a lot of Nexperia USA Inc.
BST51,135 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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