BST52TA
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- Mfr.Part #
- BST52TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.5A SOT89-3
- Stock
- 26,709
- In Stock ：
- 26,709
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Published :
- 2006
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 150MHz
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 1.5mm
- Base Part Number :
- BST52
- Continuous Collector Current :
- 500mA
- Mounting Type :
- Surface Mount
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 1.3V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 80V
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 90V
- Width :
- 2.5mm
- Emitter Base Voltage (VEBO) :
- 10V
- Terminal Form :
- Flat
- Termination :
- SMD/SMT
- ECCN Code :
- EAR99
- Length :
- 4.5mm
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- Radiation Hardening :
- No
- Max Collector Current :
- 500mA
- hFE Min :
- 2000
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA
- Current Rating :
- 500mA
- Max Power Dissipation :
- 1W
- Weight :
- 51.993025mg
- Power Dissipation :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 150mA 10V
- Number of Pins :
- 3
- Voltage - Rated DC :
- 80V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-243AA
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 500μA, 500mA
- Datasheets
- BST52TA
NPN - Darlington -55°C~150°C TJ 10μA 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BST52TA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 150mA 10V DC current gain.As it features a collector emitter saturation voltage of 1.3V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at 500mA.Keeping the emitter base voltage at 10V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 150MHz in the part.Single BJT transistor can be broken down at a voltage of 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
BST52TA Features
the DC current gain for this device is 1000 @ 150mA 10V
a collector emitter saturation voltage of 1.3V
the vce saturation(Max) is 1.3V @ 500μA, 500mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 150MHz
BST52TA Applications
There are a lot of Diodes Incorporated
BST52TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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