BSP171PE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Power Dissipation :

1.8W

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

Non-RoHS Compliant

JESD-609 Code :

e3

Voltage - Rated DC :

-60V

Case Connection :

DRAIN

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

60V

Terminal Position :

Dual

Power Dissipation-Max :

1.8W Ta

Drain-source On Resistance-Max :

0.3Ohm

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Rise Time :

8ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

300m Ω @ 1.9A, 10V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current Rating :

-1.9A

Additional Feature :

AVALANCHE RATED

Mounting Type :

Surface Mount

Lead Free :

Contains Lead

Mount :

Surface Mount

Published :

1999

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

SIPMOS®

Package / Case :

TO-261-4, TO-261AA

Vgs(th) (Max) @ Id :

2V @ 460μA

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Feedback Cap-Max (Crss) :

55 pF

Number of Pins :

4

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Continuous Drain Current (ID) :

1.9A