BSP123L6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Published :

2003

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Reach Compliance Code :

Unknown

Power Dissipation-Max :

1.79W Ta

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

0.37A

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

370mA Ta

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

6Ohm

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Terminal Form :

Gull wing

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

8.7 ns

Number of Pins :

4

Package / Case :

TO-261-4, TO-261AA

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 25V

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 10V

Turn On Delay Time :

3.3 ns

Case Connection :

DRAIN

Power Dissipation :

1.79W

FET Type :

N-Channel

Rise Time :

3.2ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6 Ω @ 370mA, 10V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

100V

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

4

Pbfree Code :

yes

Series :

SIPMOS®

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Continuous Drain Current (ID) :

370mA

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

4

Fall Time (Typ) :

9.4 ns

Terminal Finish :

MATTE TIN