BSP123E6327T

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

2.8V 10V

Vgs(th) (Max) @ Id :

1.8V @ 50µA

Power Dissipation-Max :

1.79W Ta

Published :

2003

Rds On (Max) @ Id, Vgs :

6Ohm @ 370mA, 10V

FET Type :

N-Channel

Voltage - Rated DC :

100V

Package / Case :

TO-261-4, TO-261AA

Series :

SIPMOS®

Lead Free :

Lead Free

Rise Time :

5ns

Input Capacitance :

70pF

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

370mA Ta

Current Rating :

380mA

Input Capacitance (Ciss) (Max) @ Vds :

70pF @ 25V

Rds On Max :

6 Ω

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 10V

Supplier Device Package :

PG-SOT223-4

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

370mA

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Vgs (Max) :

±20V

Mounting Type :

Surface Mount