BSP125L6433

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Pins :

4

Terminal Position :

Dual

Case Connection :

DRAIN

Power Dissipation :

1.8W

Package / Case :

TO-261-4, TO-261AA

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

110 ns

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

120mA

RoHS Status :

RoHS Compliant

Rise Time :

14.4ns

Series :

SIPMOS®

Number of Terminations :

4

Mount :

Surface Mount

Turn On Delay Time :

7.7 ns

Published :

2003

Power Dissipation-Max :

1.8W Ta

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

FET Type :

N-Channel

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 10V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Turn-Off Delay Time :

20 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

2.3V @ 94µA