BSP122,115

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Nominal Vgs :

2 V

Current - Continuous Drain (Id) @ 25°C :

550mA Ta

Element Configuration :

Single

Pin Count :

4

Published :

1996

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Radiation Hardening :

No

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

2.4V 10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

1.5W Ta

Max Dual Supply Voltage :

200V

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G4

Number of Pins :

3

Mounting Type :

Surface Mount

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

2.5 Ω @ 750mA, 10V

Length :

6.7mm

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-261-4, TO-261AA

HTS Code :

8541.29.00.75

Power Dissipation :

1.5W

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Case Connection :

DRAIN

Resistance :

2.5Ohm

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

200V

Contact Plating :

Tin

Height :

1.7mm

Number of Elements :

1

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain Current-Max (Abs) (ID) :

0.55A

Width :

3.7mm

Continuous Drain Current (ID) :

550mA

Threshold Voltage :

2V

Terminal Position :

Dual

ECCN Code :

EAR99