BSP125 E6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SIPMOS®

DS Breakdown Voltage-Min :

600V

Drain to Source Voltage (Vdss) :

600V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

ECCN Code :

EAR99

Power Dissipation-Max :

1.8W Ta

JESD-30 Code :

R-PDSO-G4

Pin Count :

4

Rds On (Max) @ Id, Vgs :

45 Ω @ 120mA, 10V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

2.3V @ 94µA

Package / Case :

TO-261-4, TO-261AA

FET Type :

N-Channel

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Surface Mount :

yes

Additional Feature :

LOGIC LEVEL COMPATIBLE

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 10V

JESD-609 Code :

e0

Peak Reflow Temperature (Cel) :

255

Pulsed Drain Current-Max (IDM) :

0.48A

Number of Terminations :

4

Current - Continuous Drain (Id) @ 25°C :

120mA Ta

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

HTS Code :

8541.29.00.95

Drain Current-Max (Abs) (ID) :

0.12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Terminal Form :

Gull wing