BSP170PE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Contains Lead

Drain to Source Voltage (Vdss) :

60V

Published :

2007

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

1.9A

Rds On Max :

300 mΩ

Power Dissipation-Max :

1.8W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Series :

SIPMOS®

Current - Continuous Drain (Id) @ 25°C :

1.9A Ta

Rise Time :

28ns

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

4

Number of Elements :

1

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

410pF @ 25V

Current Rating :

-1.9A

Max Operating Temperature :

150°C

Voltage - Rated DC :

-60V

Min Operating Temperature :

-55°C

Package / Case :

TO-261-4, TO-261AA

FET Type :

P-Channel

Power Dissipation :

1.8W

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Supplier Device Package :

PG-SOT223-4

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

300mOhm @ 1.9A, 10V

Mounting Type :

Surface Mount

Input Capacitance :

410pF