BSP135L6433
- Mfr.Part #
- BSP135L6433
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 48,329
- In Stock :
- 48,329
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 28 ns
- Published :
- 2012
- Input Capacitance (Ciss) (Max) @ Vds :
- 146pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.9nC @ 5V
- FET Feature :
- Depletion Mode
- Package / Case :
- TO-261-4, TO-261AA
- Current - Continuous Drain (Id) @ 25°C :
- 120mA Ta
- Power Dissipation :
- 1.8W
- Rise Time :
- 5.6ns
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 5.4 ns
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 182 ns
- Rds On (Max) @ Id, Vgs :
- 45Ohm @ 120mA, 10V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 1.8W Ta
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 146pF
- Rds On Max :
- 45 Ω
- Supplier Device Package :
- PG-SOT223-4
- Continuous Drain Current (ID) :
- 120mA
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 4
- Vgs(th) (Max) @ Id :
- 1V @ 94µA
- Drain to Source Voltage (Vdss) :
- 600V
- Series :
- SIPMOS®
- Packaging :
- Tape and Reel (TR)
- Min Operating Temperature :
- -55°C
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 0V 10V
- Datasheets
- BSP135L6433

N-Channel Tape & Reel (TR) 45Ohm @ 120mA, 10V ±20V 146pF @ 25V 4.9nC @ 5V 600V TO-261-4, TO-261AA
BSP135L6433HTMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 146pF @ 25V.This device conducts a continuous drain current (ID) of 120mA, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 0V 10V volts (0V 10V).
BSP135L6433HTMA1 Features
a continuous drain current (ID) of 120mA
the turn-off delay time is 28 ns
a 600V drain to source voltage (Vdss)
BSP135L6433HTMA1 Applications
There are a lot of Infineon Technologies
BSP135L6433HTMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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