BSP135L6433

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Mfr.Part #
BSP135L6433
Manufacturer
Infineon Technologies
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
48,329
In Stock :
48,329

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
150°C
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Turn-Off Delay Time :
28 ns
Published :
2012
Input Capacitance (Ciss) (Max) @ Vds :
146pF @ 25V
Gate Charge (Qg) (Max) @ Vgs :
4.9nC @ 5V
FET Feature :
Depletion Mode
Package / Case :
TO-261-4, TO-261AA
Current - Continuous Drain (Id) @ 25°C :
120mA Ta
Power Dissipation :
1.8W
Rise Time :
5.6ns
RoHS Status :
RoHS Compliant
Mounting Type :
Surface Mount
Turn On Delay Time :
5.4 ns
Mount :
Surface Mount
Fall Time (Typ) :
182 ns
Rds On (Max) @ Id, Vgs :
45Ohm @ 120mA, 10V
Vgs (Max) :
±20V
Power Dissipation-Max :
1.8W Ta
Gate to Source Voltage (Vgs) :
20V
Input Capacitance :
146pF
Rds On Max :
45 Ω
Supplier Device Package :
PG-SOT223-4
Continuous Drain Current (ID) :
120mA
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
4
Vgs(th) (Max) @ Id :
1V @ 94µA
Drain to Source Voltage (Vdss) :
600V
Series :
SIPMOS®
Packaging :
Tape and Reel (TR)
Min Operating Temperature :
-55°C
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
0V 10V
Datasheets
BSP135L6433
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies BSP135L6433 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, BSP135L6433 pinout, BSP135L6433 datasheet PDF, BSP135L6433 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies BSP135L6433 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BSP135L6433


N-Channel Tape & Reel (TR) 45Ohm @ 120mA, 10V ±20V 146pF @ 25V 4.9nC @ 5V 600V TO-261-4, TO-261AA

BSP135L6433HTMA1 Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 146pF @ 25V.This device conducts a continuous drain current (ID) of 120mA, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 5.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 0V 10V volts (0V 10V).

BSP135L6433HTMA1 Features


a continuous drain current (ID) of 120mA
the turn-off delay time is 28 ns
a 600V drain to source voltage (Vdss)


BSP135L6433HTMA1 Applications


There are a lot of Infineon Technologies
BSP135L6433HTMA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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